BST82
N-channel enhancement mode eld-effect transistor
Rev. 03 — 26 July 2000 Product specication
c
c
1. Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
BST82 in SOT23.
2. Features
s TrenchMOS technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3. Applications
s Relay driver
s High speed line driver
s Logic level translator.
4. Pinning information
1. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT23, simplied outline and symbol
Pin Description Simplied outline Symbol
1 gate (g)
SOT23 N-channel MOSFET
2 source (s)
3 drain (d)
1 2
3
03ab44
d
g
s
03ab30
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 2 of 13
9397 750 07223 C Philips Electronics N.V. 2000. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C 100 V
ID drain current (DC) Tsp = 25 °C; VGS = 5 V 190 mA
Ptot total power dissipation Tsp = 25 °C 0.83 W
Tj junction temperature 150 °C
RDSon drain-source on-state resistance VGS = 5 V; ID = 150 mA 5 10
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C 100 V
VDGR drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 k 100 V
VGS gate-source voltage (DC) ±20 V
ID drain current (DC) Tsp = 25 °C; VGS = 5 V; Figure 2 and 3 190 mA
Tsp = 100 °C; VGS = 5 V; Figure 2 120 mA
IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 μs;
Figure 3
0.8 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 0.83 W
Tstg storage temperature 65 +150 °C
Tj operating junction temperature 65 +150 °C
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C 190 mA
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 μs 0.8 A
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 3 of 13
9397 750 07223 C Philips Electronics N.V. 2000. All rights reserved.
VGS ≥ 5 V
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
Tsp = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
P
der
Tsp (
o
C)
(%)
03aa25
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
I
der
T
sp
(
o
C)
(%)
Pder
Ptot
P
tot 25 C
°
( )
100%
*
=
Ider
ID
I
D 25 C
°
( )

- 100%
*
=
03aa60
10-3
10-2
10-1
1
1 10 102 103
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon = VDS/ ID
1 ms
tp = 10 μs
100 μs
Tsp = 25oC
tp
tp
T
P
t
T
δ =
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 4 of 13
9397 750 07223 C Philips Electronics N.V. 2000. All rights reserved.
7. Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-sp) thermal resistance from junction to solder
point
mounted on a metal clad substrate;
Figure 4
150 K/W
Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board;
minimum footprint
350 K/W
Mounted on a metal substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of
pulse duration.
03aa57
0.1
1
10
102
103
10-5 10-4 10-3 10-2 10-1 1 10
tp (s)
Zth(j-sp)
(K/W)
single pulse
δ = 0.5
0.2
0.1
0.05
0.02
tp
tp
T
P
t
T
δ =
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 5 of 13
9397 750 07223 C Philips Electronics N.V. 2000. All rights reserved.
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specied
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 10 μA; VGS = 0 V
Tj = 25 °C 100 130 V
Tj = 55 °C 89 V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 °C 1 2 V
Tj = 150 °C 0.6 V
Tj = 55 °C 3.5 V
IDSS drain-source leakage current VDS = 60 V; VGS = 0 V
Tj = 25 °C 0.01 1.0 μA
Tj = 150 °C 10 μA
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V 10 100 nA
RDSon drain-source on-state
resistance
VGS = 5 V; ID = 150 mA;
Figure 7 and 8
Tj = 25 °C 5 10
Tj = 150 °C 23
Dynamic characteristics
gfs forward transconductance VDS = 5 V; ID = 175 mA;
Figure 11
350 mS
Ciss input capacitance VGS = 0 V; VDS = 10 V;
f = 1 MHz; Figure 12
25 40 pF
Coss output capacitance 8.5 15 pF
Crss reverse transfer capacitance 5 10 pF
ton turn-on time VDD = 50 V; RD = 250 ;
VGS = 10 V; RG = 50 ;
RGS = 50
3 10 ns
toff turn-off time 12 15 ns
Source-drain diode
VSD source-drain (diode forward)
voltage
IS = 300 mA; VGS = 0 V;
Figure 13
0.95 1.5 V
trr reverse recovery time IS = 300 mA;
dIS/dt = 100 A/μs;
VGS = 0 V; VDS = 25 V
30 ns
Qr recovered charge 30 nC
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 6 of 13
9397 750 07223 C Philips Electronics N.V. 2000. All rights reserved.
Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID * RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aa63
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS (V)
ID
(A)
3.5 V
Tj = 25oC VGS = 10V
4 V
3 V
5 V
03aa65
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 1 2 3 4 5 6 7 8
VGS (V)
ID
(A) VDS > ID X RDSon
Tj = 25oC
150oC
03aa64
0
1
2
3
4
5
6
7
8
9
10
11
12
0 0.1 0.2 0.3 0.4 0.5
ID (A)
RDSon
()
VGS = 10V
Tj = 25oC
4 V
3.5V
3 V
5 V
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60 -20 20 60 100 140 180
T
j
(
o
C)
a
a
RDSon
RDSon 25 C
°
( )

-
=
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 7 of 13
9397 750 07223 C Philips Electronics N.V. 2000. All rights reserved.
ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj = 25 °C and 150 °C; VDS > ID * RDSon VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa34
0
0.5
1
1.5
2
2.5
3
-60 -20 20 60 100 140 180
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03aa37
0 0.5 1 1.5 2 2.5 3
typ
min
I
D
VGS (V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03aa66
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
ID (A)
gfs
(S)
Tj = 25oC
150oC
VDS > ID X RDSon
03aa68
1
10
102
10-1 1 10 102
VDS (V)
Ciss, Coss,
Crss (pF)
Ciss
Coss
Crss
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 8 of 13
9397 750 07223 C Philips Electronics N.V. 2000. All rights reserved.
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
voltage; typical values.
03aa67
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD (V)
IS
(A)
Tj = 25oC
150oC
VGS = 0 V
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 9 of 13
9397 750 07223 C Philips Electronics N.V. 2000. All rights reserved.
9. Package outline
Fig 14. SOT23.
UNIT
A1
max.
bp c D E e1 HE Lp Q w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w M
v M A
B
A
B
0 1 2 mm
scale
A
1.1
0.9
c
X
1 2
3
Plastic surface mounted package; 3 leads SOT23
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 10 of 13
9397 750 07223 C Philips Electronics N.V. 2000. All rights reserved.
10. Revision history
Table 6: Revision history
Rev Date CPCN Description
03 20000726 HZG303 Product specication; third version; supersedes BST82_CNV_2 of 970623.
Converted from VDMOS (Nijmegen) to TrenchMOS technology (Hazel Grove).
02 19970623 - Product specication; second version.
01 19901031 - Product specication; initial version.
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 11 of 13
9397 750 07223 C Philips Electronics N.V. 2000 All rights reserved.
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
12. Denitions
Short-form specication — The data in a short-form specication is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values denition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specication is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specied use without further testing or modication.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specied.
Datasheet status Product status Denition [1]
Objective specication Development This data sheet contains the design target or goal specications for product development. Specication may
change in any manner without notice.
Preliminary specication Qualication This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specication Production This data sheet contains nal specications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
Product specication Rev. 03 — 26 July 2000 12 of 13
9397 750 07223 C Philips Electronics N.V. 2000. All rights reserved.
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(SCA70)
C Philips Electronics N.V. 2000. Printed in The Netherlands
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Date of release: 26 July 2000 Document order number: 9397 750 07223
Contents
Philips Semiconductors BST82
N-channel enhancement mode eld-effect transistor
1 Description 1
2 Features 1
3 Applications 1
4 Pinning information.1
5 Quick reference data 2
6 Limiting values.2
7 Thermal characteristics.4
7.1 Transient thermal impedance 4
8 Characteristics.5
9 Package outline 9
10 Revision history.10
11 Data sheet status 11
12 Definitions 11
13 Disclaimers.11